STP45NE06L STP45NE06Lfp n - channel 60v - 0.022 w - 45a - to-220/to-220fp stripfet ? power mosfet preliminary data n typical r ds(on) = 0.022 w n exceptional dv/dt capability n 100% avalanche tested n low gate charge 100 o c n low threshold drive description this power mosfet is the latest development of stmicroelectronics unique "single feature size ? " strip-based process. the resulting transi- stor shows extremely high packing density for low on-resistance, rugged avalance characteristics and less critical alignment steps therefore a re- markable manufacturing reproducibility. applications n high current, high speed switching n solenoid and relay drivers n motor control, audio amplifiers n dc-dc & dc-ac converters ? internal schematic diagram absolute maximum ratings symbol parameter value unit STP45NE06L STP45NE06Lfp v ds drain-source voltage (v gs = 0) 60 v v dgr drain- gate voltage (r gs = 20 k w ) 60 v v gs gate-source voltage 20 v i d drain current (continuous) at t c = 25 o c4525a i d drain current (continuous) at t c = 100 o c 31 17.5 a i dm ( ) drain current (pulsed) 180 180 a p tot total dissipation at t c = 25 o c 100 35 w derating factor 0.67 0.23 w/ o c v iso insulation withstand voltage (dc) ? 2000 v dv/dt peak diode recovery voltage slope 7 v/ns t stg storage temperature -65 to 175 o c t j max. operating junction temperature 175 o c ( ) pulse width limited by safe operating area ( 1 ) i sd 45 a, di/dt 300 a/ m s, v dd v (br)dss , t j t jmax june 1999 to-220 to-220fp 1 2 3 1 2 3 type v dss r ds(on) i d STP45NE06L STP45NE06Lfp 60 v 60 v < 0.028 w < 0.028 w 45 a 25 a 1/6 www.datasheet www.datasheet www.datasheet www.datasheet 4u 4u4u 4u .com .com .com .com 4 .com u datasheet
thermal data to-220 to-220fp r thj-case thermal resistance junction-case max 1.5 4.28 o c/w r thj-amb r thc-sink t l thermal resistance junction-ambient max thermal resistance case-sink typ maximum lead temperature for soldering purpose 62.5 0.5 300 o c/w o c/w o c avalanche characteristics symbol parameter max value unit i ar avalanche current, repetitive or not-repetitive (pulse width limited by t j max) 45 a e as single pulse avalanche energy (starting t j = 25 o c, i d = i ar , v dd = 25v) 150 mj electrical characteristics (t case = 25 o c unless otherwise specified) off symbol parameter test conditions min. typ. max. unit v (br)dss drain-source breakdown voltage i d = 250 m a v gs = 0 60 v i dss zero gate voltage drain current (v gs = 0) v ds = max rating v ds = max rating t c = 125 o c 1 10 m a m a i gss gate-body leakage current (v ds = 0) v gs = 20 v 100 na on ( * ) symbol parameter test conditions min. typ. max. unit v gs(th) gate threshold voltage v ds = v gs i d = 250 m a 1 1.7 2.5 v r ds(on) static drain-source on resistance v gs = 5 v i d = 22.5 a v gs = 10 v i d = 22.5 a 0.024 0.022 0.03 0.028 w w i d(on) on state drain current v ds > i d(on) x r ds(on)max v gs = 10 v 45 a dynamic symbol parameter test conditions min. typ. max. unit g fs ( * ) forward transconductance v ds > i d(on) x r ds(on)max i d =22.5 a 15 30 s c iss c oss c rss input capacitance output capacitance reverse transfer capacitance v ds = 25 v f = 1 mhz v gs = 0 2370 350 90 3600 480 100 pf pf pf STP45NE06L/fp 2/6 www.datasheet www.datasheet www.datasheet www.datasheet 4u 4u4u 4u .com .com .com .com 4 .com u datasheet
electrical characteristics (continued) switching on symbol parameter test conditions min. typ. max. unit t d(on) t r turn-on time rise time v dd = 30 v i d = 22.5 a r g =4.7 w v gs = 5 v 37 100 50 135 ns ns q g q gs q gd total gate charge gate-source charge gate-drain charge v dd = 48 v i d = 45 a v gs = 5 v 31 13 13 42 nc nc nc switching off symbol parameter test conditions min. typ. max. unit t r(voff) t f t c off-voltage rise time fall time cross-over time v dd = 48 v i d = 45 a r g =4.7 w v gs = 10 v 20 45 72 27 61 100 ns ns ns source drain diode symbol parameter test conditions min. typ. max. unit i sd i sdm ( ) source-drain current source-drain current (pulsed) 45 180 a a v sd ( * ) forward on voltage i sd =45 a v gs = 0 1.5 v t rr q rr i rrm reverse recovery time reverse recovery charge reverse recovery current i sd = 45 a di/dt = 100 a/ m s v dd = 30 v t j = 150 o c 90 225 5 ns nc a ( * ) pulsed: pulse duration = 300 m s, duty cycle 1.5 % ( ) pulse width limited by safe operating area STP45NE06L/fp 3/6 www.datasheet www.datasheet www.datasheet www.datasheet 4u 4u4u 4u .com .com .com .com 4 .com u datasheet
dim. mm inch min. typ. max. min. typ. max. a 4.40 4.60 0.173 0.181 c 1.23 1.32 0.048 0.051 d 2.40 2.72 0.094 0.107 d1 1.27 0.050 e 0.49 0.70 0.019 0.027 f 0.61 0.88 0.024 0.034 f1 1.14 1.70 0.044 0.067 f2 1.14 1.70 0.044 0.067 g 4.95 5.15 0.194 0.203 g1 2.4 2.7 0.094 0.106 h2 10.0 10.40 0.393 0.409 l2 16.4 0.645 l4 13.0 14.0 0.511 0.551 l5 2.65 2.95 0.104 0.116 l6 15.25 15.75 0.600 0.620 l7 6.2 6.6 0.244 0.260 l9 3.5 3.93 0.137 0.154 dia. 3.75 3.85 0.147 0.151 l6 a c d e d1 f g l7 l2 dia. f1 l5 l4 h2 l9 f2 g1 to-220 mechanical data p011c STP45NE06L/fp 4/6 www.datasheet www.datasheet www.datasheet www.datasheet 4u 4u4u 4u .com .com .com .com 4 .com u datasheet
dim. mm inch min. typ. max. min. typ. max. a 4.4 4.6 0.173 0.181 b 2.5 2.7 0.098 0.106 d 2.5 2.75 0.098 0.108 e 0.45 0.7 0.017 0.027 f 0.75 1 0.030 0.039 f1 1.15 1.7 0.045 0.067 f2 1.15 1.7 0.045 0.067 g 4.95 5.2 0.195 0.204 g1 2.4 2.7 0.094 0.106 h 10 10.4 0.393 0.409 l2 16 0.630 l3 28.6 30.6 1.126 1.204 l4 9.8 10.6 0.385 0.417 l6 15.9 16.4 0.626 0.645 l7 9 9.3 0.354 0.366 ? 3 3.2 0.118 0.126 l2 a b d e h g l6 f l3 g1 123 f2 f1 l7 l4 to-220fp mechanical data STP45NE06L/fp 5/6 www.datasheet www.datasheet www.datasheet www.datasheet 4u 4u4u 4u .com .com .com .com 4 .com u datasheet
information furnished is believed to be accurate and reliable. however, stmicroelectronics assumes no responsibility for the co nsequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. no license is granted by implication or otherwise under any patent or patent rights of stmicroelectronics. specification mentioned in this pu blication are subject to change without notice. this publication supersedes and replaces all information previously supplied. stmicroelectron ics products are not authorized for use as critical components in life support devices or systems without express written approval of stmicr oelectronics. the st logo is a trademark of stmicroelectronics ? 1999 stmicroelectronics C printed in italy C all rights reserved stmicroelectronics group of companies australia - brazil - canada - china - france - germany - italy - japan - korea - malaysia - malta - mexico - morocco - the neth erlands - singapore - spain - sweden - switzerland - taiwan - thailand - united kingdom - u.s.a. http://www.st.com . STP45NE06L/fp 6/6 www.datasheet www.datasheet www.datasheet www.datasheet 4u 4u4u 4u .com .com .com .com 4 .com u datasheet
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